Growth mechanism of iron nanoparticles on (0 0 0 1) sapphire wafers
نویسندگان
چکیده
Laser ablation of a high purity (99.7%) iron target was used to accomplish the depositions of iron nanoparticles on the (0 0 0 1) face of single crystal sapphire wafers. The nanoparticles were characterized in situ by means of X-ray photoelectron spectroscopy (XPS). The growth mechanism was determined by applying the QUASES-Tougaard methodology to the extended part of the background intensity of the Fe KMM peak in XPS spectra. The heights of nanoparticles obtained are between 3.5 and 6.5 nm. In the first 150 laser pulses, the height of the nanoparticles remained constant while the coverage was increased. r 2008 Elsevier Ltd. All rights reserved.
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عنوان ژورنال:
- Microelectronics Journal
دوره 39 شماره
صفحات -
تاریخ انتشار 2008